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| inchange semiconductor product specification silicon npn power transistors 2N5655 2n5656 2n5657 description ? ? with to-126 package ? high breakdown voltage applications ? for use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and ac line relays pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit 2N5655 275 2n5656 325 v cbo collector-base voltage 2n5657 open emitter 375 v 2N5655 250 2n5656 300 v ceo collector-emitter voltage 2n5657 open base 350 v v ebo emitter-base voltage open collector 6 v i c collector current 0.5 a i cm collector current-peak 1.0 a i b base current 0.25 a p d total power dissipation t c =25 ?? 20 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 6.25 ??/w
inchange semiconductor product specification 2 silicon npn power transistors 2N5655 2n5656 2n5657 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2N5655 250 2n5656 300 v ceo(sus) collector-emitter sustaining voltage 2n5657 i c =0.1a; i b =0;l=50mh 350 v v cesat-1 collector-emitter saturation voltage i c =100ma ;i b =10ma 1.0 v v cesat-2 collector-emitter saturation voltage i c =250ma ;i b =25ma 2.5 v v cesat-3 collector-emitter saturation voltage i c =500ma ;i b =100ma 10 v v be base-emitter on voltage i c =100ma ; v ce =10v 1.0 v 2N5655 v ce =150v; i b =0 2n5656 v ce =200v; i b =0 i ceo collector cut-off current 2n5657 v ce =250v; i b =0 0.1 ma 2N5655 v cb =275v; i e =0 2n5656 v cb =325v; i e =0 i cbo collector cut-off current 2n5657 v cb =375v; i e =0 10 | a i cex collector cut-off current v ce = rated v ceo ; v be(off) =1.5v t c =100 ?? 0.1 1.0 ma i ebo emitter cut-off current v eb =6v; i c =0 10 | a h fe-1 dc current gain i c =50ma ; v ce =10v 25 h fe-2 dc current gain i c =100ma ; v ce =10v 30 250 h fe-3 dc current gain i c =250ma ; v ce =10v 15 h fe-4 dc current gain i c =500ma ; v ce =10v 5 f t transition frequency i c =50ma ; v ce =10v;f=10mhz 10 mhz c ob output capacitance f=100khz ; v cb =10v;i e =0 25 pf inchange semiconductor product specification 3 silicon npn power transistors 2N5655 2n5656 2n5657 package outline fig.2 outline dimensions |
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